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MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch

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Paru le : 2013-10-07

This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as we...
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Description du livre

This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.

À propos

Auteur
Ghanshyam Singh , Viranjay M. Srivastava
Éditeur
Springer
Collection
Analog Circuits and Signal Processing
Parution
2013-10-07
Pages
199 pages
EAN papier
9783319011646

Caractéristiques détaillées - droits

EAN EPUB
9783319011653
Prix
94,94 €
Nombre pages copiables
1
Nombre pages imprimables
19
Taille du fichier
2867 Ko
Ce livre est accessible aux handicaps informations d'accessibilité

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